triquint semiconductor texas : phone (972)994 8465 fax (972)994 8504 web: www.triquint.com product data sheet september 26, 2002 1 17-21 ghz medium power amplifier TGA9088A-SCC key features and performance ? 0.25um phemt technology ? 17-21ghz frequency range ? 22 dbm @ p2db nominal pout ? 18.5 db nominal gain ? irl>18 db, orl>10 db ? 7v, 66ma self bias primary applications ? satellite systems ? point-to-point radio chip dimensions 2.4mm x 1.5 mm x 0.1mm 0 5 10 15 20 25 17 18 19 20 21 frequency (ghz) gain (db) typical electrical characteristics 7v, 66ma self bias description the triquint TGA9088A-SCC is a 17-21 ghz 0.125 watt self-biased medium power amplifier in mmic form. the part is designed using triquints proven standard 0.25 um gate phemt production process with 100 um substrate technology. this mpa provides a nominal 22 dbm of output power at 2 db gain compression with a nominal small signal gain of 18.5 db. the part provides an economical solution for a 20 ghz driver and provides application solutions for the satellite and point-to-point radio markets the TGA9088A-SCC is 100% dc and rf tested on-wafer to ensure performance compliance. 0 5 10 15 20 25 17 18 19 20 21 frequency (ghz) p2db (dbm)
triquint semiconductor texas : phone (972)994 8465 fax (972)994 8504 web: www.triquint.com product data sheet september 26, 2002 2 table i maximum ratings 6/ symbol parameter value notes v + positive supply voltage 8 v 4/ i + positive supply current (quiescent) 90 ma 5/ 4 / | i g | gate supply current 3.5 ma p in input continuous wave power 17 dbm p d power dissipation 0.615 w 3/ 4 / t ch operating channel temperature 150 0 c1/ 2 / t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1/ these ratings apply to each individual fet. 2/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possibl e levels. 3/ when operated at this bias condition with a base plate temperature of 70 0 c (t ch = 149.27 0 c), th e median life is reduced from 6.9e+6 to 1.1e+6 hrs. 4/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 5/ total current for the entire mmic. 6/ these ratings represent the maximum operable values for this device. TGA9088A-SCC table ii dc probe tests (t a = 25 c nominal) symbol parameter minimum maximum value i max1 maximum current 56 102 ma g m1 transconductance 33 80 ms v p1,2 pinch-off voltage -1.5 -0.5 v v bvgs1 breakdown voltage gate-source -30 -8 v v bvgd1 breakdown voltage gate-drain -30 -12 v
triquint semiconductor texas : phone (972)994 8465 fax (972)994 8504 web: www.triquint.com product data sheet september 26, 2002 3 table iii on-wafer rf probe characteristics (t a = 25 0 c nominal) self bias v d = 7 v limit symbol parameter test condition 45ma id 80ma min typ max units gain small signal gain f = 17 C 21 ghz* 16 18.5 --- db irl input return loss f = 17 C 21 ghz* --- -15 -7 db orl output return loss f = 17 C 21 ghz* --- -13 -6 db f = 17 ghz ** 17 19 --- p2db output power @ 2db compression f = 19 - 21 ghz ** 20 22 --- dbm * s-parameter data is taken at 1ghz step size. ** power data is taken at 2 ghz step size. TGA9088A-SCC table iv thermal information* parameter test conditions t ch ( o c) r q jc ( c/w) t m (hrs) r q jc thermal resistance (channel to backside of carrier) vd = 7 v i d = 66 ma self bias pdiss = 0.462 w 128.35 126.30 6.9e+6 note: assumes eutectic attach using 1.5 mil 80/20 ausn solder mounted to a 20 mil cumo carrier at 70 c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated. * this information is a result of a thermal model.
triquint semiconductor texas : phone (972)994 8465 fax (972)994 8504 web: www.triquint.com product data sheet september 26, 2002 4 TGA9088A-SCC 15 16 17 18 19 20 21 22 23 24 25 17 18 19 20 21 frequency (ghz) gain (db) 5th 10th 20th 30th 40th 50th 60th 70th 80th 90th 95th typical on-wafer electrical characteristics 7v, 66ma self bias 15 16 17 18 19 20 21 22 23 24 25 17 18 19 20 21 frequency (ghz) output power @ 2db compression (dbm) 5th 10th 20th 30th 40th 50th 60th 70th 80th 90th 95th
triquint semiconductor texas : phone (972)994 8465 fax (972)994 8504 web: www.triquint.com product data sheet september 26, 2002 5 TGA9088A-SCC -40 -35 -30 -25 -20 -15 -10 -5 0 17 18 19 20 21 frequency (ghz) input return loss (db) 5th 10th 20th 30th 40th 50th 60th 70th 80th 90th 95th typical on-wafer electrical characteristics 7v, 66ma self bias -40 -35 -30 -25 -20 -15 -10 -5 0 17 18 19 20 21 frequency (ghz) output return loss (db) 5th 10th 20th 30th 40th 50th 60th 70th 80th 90th 95th
triquint semiconductor texas : phone (972)994 8465 fax (972)994 8504 web: www.triquint.com product data sheet september 26, 2002 6 TGA9088A-SCC mechanical drawing gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test.
triquint semiconductor texas : phone (972)994 8465 fax (972)994 8504 web: www.triquint.com product data sheet september 26, 2002 7 gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGA9088A-SCC chip assembly diagram this configuration is for a self-bias logic pad current search with connections for bin g06. see table v for alternate pad connections corresponding with the bins number listed. table v pad connections number connection 1 connection 2 bins 1 none none g01 2 pad 3 to pad 4 pad 7 to pad 8 g02 3 pad 2 to pad 3 pad 6 to pad 7 g03 4 pad 2 to pad 4 pad 6 to pad 8 g04 5 pad 1 to pad 2 pad 5 to pad 6 g05 6 pad 1 to pad 3 pad 5 to pad 7 g06 7 pad 1 to pad 4 pad 5 to pad 8 g07
triquint semiconductor texas : phone (972)994 8465 fax (972)994 8504 web: www.triquint.com product data sheet september 26, 2002 8 assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGA9088A-SCC reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 ? c. an alloy station or conveyor furnace with reducing atmosphere should be used. no fluxes should be utilized. coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire. maximum stage temperature is 200 ? c.
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